KGF75N65KDF TO-247 75A 650V 484W IGBT TRANSISTOR

MAXIMUM RATING (Ta=25 )

*Repetitive rating : Pulse width limited by max. junction temperature

G

C

E

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Emitter Voltage VCES 650 V

Gate-Emitter Voltage VGES 20 V

Collector Current

@Tc=25

IC

100 A

@Tc=100 75 A

Pulsed Collector Current ICM* 225 A

Diode Continuous Forward Current @Tc=25 IF 75 A

Diode Maximum Forward Current IFM* 225 A

Maximum Power Dissipation

@Tc=25

PD

484 W

@Tc=100 242 W

Maximum Junction Temperature Tj 175

Storage Temperature Range Tstg -55 to + 175