BUP314 - IGBTs TRANS IGBT CHIP N-CH 1200V, 52A IGBTs TRANSISTOR

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Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.2 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	190 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	Infineon Technologies
Continuous Collector Current:	50 A
Continuous Collector Current Ic Max:	52 A
Gate-Emitter Leakage Current:	600 nA
Height:	21.1 mm
Length:	16.03 mm
Product Type:	IGBT Transistors
	250
Subcategory:	IGBTs
Width:	5.16 mm
Unit Weight:	38 g

BUP314 - IGBTs TRANS IGBT CHIP N-CH 1200V, 52A