HY3215W - HY3215 - TO-247 - 130A 150V N-CHANNEL MOSFET

Type Designator: HY3215W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 349 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 135 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 480 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm